| PART |
Description |
Maker |
| MA4E2508MSP-T MADS-002508-1112HT MA4E2508L-1112 MA |
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE CASE 1112, 2 PIN
SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
|
NXP Semiconductors N.V.
M/A-COM Technology Solutions, Inc.
|
| MA4E2501L-1290W MA4E2501-1290 MA4E2501L-1290 MA4E2 |
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes
|
MACOM[Tyco Electronics]
|
| CDBURT0230R-HF CDBUR0230R-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=35V, V-R=30V, I-O=0.2A
Low Profile SMD Schottky Barrier Diode
|
Comchip Technology
|
| 10FWJ2CZ47M |
SCHOTTKY BARRIER RECTIFIER STACK(LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE)
|
TOSHIBA[Toshiba Semiconductor]
|
| CMS03 |
Schottky Barrier Rectifier Trench Schottky Barrier Type Switching Mode Power Supply Applications Portable Equipment Battery Applications
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
|
TOSHIBA[Toshiba Semiconductor]
|
| M6MGB64BS8BWG M6MGT64BS8BWG |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas
|
| M6MGB64BM17AWG-P M6MGT64BM17AWG-P |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas
|
| M6MGB64BM34CWG M6MGT64BM34CWG |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas
|
| M6MGD13VW66CWG-P |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas
|
| M6MGE13VW34DWG |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas
|
| KDR393 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
|
| U1GWJ2C49 |
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION
TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
